Plasma and surface diagnostics of silicon nitride thin film coatings generated by SiH4+NH3 RF discharges.
Título de la tesis:
Plasma and surface diagnostics of silicon nitride thin film coatings generated by SiH4+NH3 RF discharges.
Autor/es:
Romero, M. F. - Sanz Lluch, M. del Mar - Muñoz, E. - Jimenez, Ana - Tanarro, Isabel
Tipo de documento:
Ponencia en Congreso o Jornada (Artículo)
Universidad:
Facultad de Ciencias de la Actividad Física y del Deporte (I
Departamento:
Otro
Idioma:
Palabras clave:
Fecha de la defensa:
2008-01-01
Notas:
Resumen: Although plasma processing in low pressure electric discharge reactors has become an extensive and critical step in the fabrication of microelectronic devices, its development has been carried out mostly empirically so far, by changing external reactor parameters in order to develop the best achievable film properties, whereas the intrinsic state of the plasma has been largely unknown [1, 2]. In this work, silicon nitride (SiN) thin films have been grown on silicon samples and on AlGaN/GaN High Electron Mobility Transistors (HEMT) by Plasma Enhanced Chemical Vapor Deposition (PE-CVD). The SiN ...
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